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| Product Description Stanford Microdevices SGA-5263 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a Darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 Ohm impedance, the SGA-5263 requires only DC blocking and bypass capacitors for external components. Small Signal Gain vs. Frequency 15 Preliminary Preliminary SGA-5263 DC-4500 MHz, Silicon Germanium Cascadeable Gain Block 10 dB Product Features DC-4500 MHz Operation Single Voltage Supply Low Current Draw: 60mA at 3.4V typ. High Output Intercept: 29 dBm typ. at 1950MHz Applications Oscillator Amplifiers Broadband Gain Blocks IF/RF Buffer Amplifiers 5 25C -40C 85C 0 0.1 1 1.9 2.8 3.7 4.6 5.5 Frequency GHz Sy mbol Parameters: Test C onditions: Z0 = 50 Ohms, ID = 60 mA, T = 25C Output Power at 1dB C ompressi on f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz U nits dB m dB m dB m dB m dB m dB m dB dB dB MHz f = 1950 MHz f = 1950 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 1950 MHz dB dB dB dB V C /W Min. Ty p. 16.3 15.0 14.0 32.5 29.3 27.3 13.3 12.6 12.3 4500 1.2:1 1.4:1 18.3 19.2 19.5 4.0 3.4 255 Max. P 1dB IP3 Thi rd Order Intercept Poi nt Power out per tone = -10 dBm S 21 Bandwi dth S11 S 22 S 12 NF VD Rth, j-l Small Si gnal Gai n S11, S22: Mi ni mum 10db Return Loss (typ.) Input VSWR Output VSWR Reverse Isolati on Noi se Fi gure D evi ce Voltage Thermal Resi stance (juncti on - lead) The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101540 Rev A 1 Preliminary Preliminary SGA-5263 DC-4.5 GHz 3.4V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Parameter Supply C urrent D evi ce Voltage Operati ng Temperature Maxi mum Input Power Storage Temperature Range Operati ng Juncti on Temperature Value 120 6 -40 to +85 +10 -40 to +150 +150 U nit mA V C dB m C C Key parameters, at typical operating frequencies: Parameter 100 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on Noi se Fi gure 500 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on Noi se Fi gure 850 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on Noi se Fi gure 1950 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on Noi se Fi gure 2400 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on 3500 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on Ty pical 25C Test C ondition U nit dB dB m dB m dB dB dB dB dB m dB m dB dB dB dB dB m dB m dB dB dB dB dB m dB m dB dB dB dB dB m dB m dB dB dB dB m dB m dB dB (ID = 60mA, unless otherwise noted) 13.6 33.6 16.1 26.0 17.7 3.9 13.5 33.0 16.4 23.5 18.0 3.9 13.3 32.5 16.3 21.4 18.3 4.0 12.6 29.3 15.0 20.2 19.2 4.0 12.3 27.3 14.0 23.0 19.5 11.8 23.1 11.6 24.6 19.6 Tone spaci ng = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spaci ng = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spaci ng = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spaci ng = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spaci ng = 1 MHz, Pout per tone = -10dBm Tone spaci ng = 1 MHz, Pout per tone = -10dBm 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101540 Rev A Preliminary Preliminary SGA-5263 DC-4.5 GHz 3.4V SiGe Amplifier Pin # 1 Function Description GND Connection to ground. For best performance use via holes (as close to ground leads as possible) to reduce lead inductance. GND Same as Pin 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Same as Pin 1 GND Same as Pin 1 RF OUT RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of this bias netw ork should be w ell bypassed. Device Schematic 2 3 4 5 6 Application Schematic R ecommended B ias R esistor Values Supply Voltage(Vs) Rbi as (Ohms) 5V 27 7.5V 68 9V 91 12V 140 Cd1 Cd2 R bias Vs Note: A bias resistor is needed for stability over temperature. 50 ohm microstrip Lchoke 1,2 3 Cb1 6 4,5 Cb2 50 ohm microstrip R eference D esignator C b1 C b2 C d1 C d2 Lchoke Function D C Blocki ng D C Blocki ng D ecoupli ng D ecoupli ng AC Blocki ng 500 MH z 220 pF 220 pF 1 uF 100 pF 68 nH 850 MH z 100 pF 100 pF 1 uF 68 pF 33 nH 1950 MH z 68 pF 68 pF 1 uF 22 pF 22 nH 2400 MH z 56 pF 56 pF 1 uF 22 pF 18 nH 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101540 Rev A Preliminary Preliminary SGA-5263 DC-4.5 GHz 3.4V SiGe Amplifier 15 S21 vs. Temperature, ID = 60mA 0 S12 vs. Temperature, ID = 60mA 10 -10 dB 5 25C -40C 85C dB -20 25C -40C 85C 0 0.1 1 1.9 2.8 3.7 -30 5.5 0.1 1 1.9 2.8 3.7 4.6 4.6 5.5 GHz GHz 0 S11 vs. Temperature, ID = 60mA 0 S22 vs. Temperature, ID = 60mA -10 -10 dB -20 dB 25C -40C 85C -20 -30 -30 -40 0.1 1 1.9 2.8 3.7 -40 5.5 0.1 1 1.9 2.8 3.7 25C -40C 85C 4.6 4.6 5.5 GHz GHz 40 IP3 vs. Temperature, ID = 60mA 20 P1dB vs. Temperature, ID = 60mA 30 15 dBm 20 25C -40C 85C dBm 10 25C -40C 85C 10 5 0 0.1 1 1.9 2.8 3.7 0 0.1 1 1.9 2.8 3.7 GHz GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101540 Rev A Preliminary Preliminary SGA-5263 DC-4.5 GHz 3.4V SiGe Amplifier Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part N umber SGA-5263 R eel Siz e 7" D ev ices/R eel 3000 6 5 4 Note: Pin 1 is on lower left when you can read package marking Package Marking A52 1 2 3 Package Dimensions 1.30 (0.051) REF. Pad Layout 0.026 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 0.016 0.425 (0.017) TYP. 0.20 (0.0080 0.10 (0.004) 0.30 REF. 10 0.30 (0.012) 0.10 (0.0040 DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101540 Rev A |
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